N-Channel 600V 12A (Tc) 78W (Tc) Surface Mount TO-252AA
Win Source Part Number: 1277745-SIHD240N60E-
Category: Discrete Semiconductor Products>Transistors
Series: E
Package: Tube
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 78W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252AA
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 783 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHD240N60E-GE3CT,SI
Base Product Number: SIHD240
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET 600V Vds; +/-30V Vgs DPAK (TO-252)
MOSFET N-CH 600V 12A DPAK
MOSFET, N-CH, 12A, 600V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.208ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power DissipationRoHS Compliant: Yes
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHD240N60E-GE3-ND | 1277745-SIHD240N60E-GE3 | SIHD240N60E-GE3 | SIHD240N60E-GE3 | 07AH6939 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 12A, 600V, To-252; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel |
