N-Channel 600V 4.2A (Tc) 63W (Tc) Surface Mount D-Pak
Win Source Part Number: 1277779-SIHD1K4N60E-
Category: Discrete Semiconductor Products>Transistors
Series: E
Package: Bulk
Standard Package: 2,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 63W (Tc)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHD1K4N60E-GE3DKR,S
Base Product Number: SIHD1
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET 600V Vds 30V Vgs DPAK (TO-252)
MOSFET, N-CH, 4.2A, 600V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:4.2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):1.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power DissipationRoHS Compliant: Yes
MOSFET N-CH 600V 4.2A TO252AA
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIHD1K4N60E-GE3-ND | 1277779-SIHD1K4N60E-GE3 | SIHD1K4N60E-GE3 | 99AC9554 | SIHD1K4N60E-GE3 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Mosfet, N-Ch, 4.2A, 600V, To-252; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
