N-Channel 600V 19A (Tc) 156W (Tc) Surface Mount TO-252AA
MOSFET N-CH 600V 19A DPAK
MOSFET EF Series Power MOSFET With Fast Body Diode; 4th Gen E Series Technology
MOSFET, N-CH, 600V, 19A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.175ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIHD186N60EF-GE3-ND | SIHD186N60EF-GE3 | SIHD186N60EF-GE3 | 10AH0964 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 19A, To-252-3; Transistor Polarity Vishay |
| Polarity | N-Channel |
