Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHD180N60E-GE3 SIHD180N60E-GE3

Description
Manufacturer: Vishay Win Source Part Number: 894973-SIHD180N60E-G E3 Series: E Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 600 V 19A (Tc) 156W (Tc) Surface Mount D-Pak Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Package: Tube Mounting: Surface Mount Family Name: SIHD180 Categories: Discrete Semiconductor Products Case / Package: D-Pak ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 51 Weeks HTSUS: 8541.29.0095
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Description
Manufacturer: Vishay Win Source Part Number: 894973-SIHD180N60E-G E3 Series: E Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 600 V 19A (Tc) 156W (Tc) Surface Mount D-Pak Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Package: Tube Mounting: Surface Mount Family Name: SIHD180 Categories: Discrete Semiconductor Products Case / Package: D-Pak ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 51 Weeks HTSUS: 8541.29.0095
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHD180N60E-GE3 - 894973-SIHD180N60E-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHD180N60E-GE3
894973-SIHD180N60E-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHD180N60E-GE3 894973-SIHD180N60E-GE3
Manufacturer: Vishay Win Source Part Number: 894973-SIHD180N60E-G E3 Series: E Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 600 V 19A (Tc) 156W (Tc) Surface Mount D-Pak Package: TO-252-3, DPak (2 Leads + Tab), SC-63 Package: Tube Mounting: Surface Mount Family Name: SIHD180 Categories: Discrete Semiconductor Products Case / Package: D-Pak ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 58 pct. Supply and Demand Status: Balance Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 51 Weeks HTSUS: 8541.29.0095

Manufacturer: Vishay
Win Source Part Number: 894973-SIHD180N60E-GE3
Series: E
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 19A (Tc) 156W (Tc) Surface Mount D-Pak
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: Tube
Mounting: Surface Mount
Family Name: SIHD180
Categories: Discrete Semiconductor Products
Case / Package: D-Pak
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095

Buy Now Datasheet
Single FETs, MOSFETs - SIHD180N60E-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHD180N60E-GE3-ND
Single FETs, MOSFETs SIHD180N60E-GE3-ND
N-Channel 600V 19A (Tc) 156W (Tc) Surface Mount D-Pak

N-Channel 600V 19A (Tc) 156W (Tc) Surface Mount D-Pak

Buy Now Datasheet
Singapore
600V 19A DPAK MOSFET Transistor
278-SIHD180N60E-GE3
600V 19A DPAK MOSFET Transistor 278-SIHD180N60E-GE3
Trans MOSFET N-CH 600V 19A 3-Pin(2+Tab ) DPAK Product overview: SIHD180N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 19A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 19A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHD180N60E-GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 600V 19A 3-Pin(2+Tab ) DPAK Product overview: SIHD180N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 19A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 19A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHD180N60E-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHD180N60E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHD180N60E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHD180N60E-GE3
MOSFET N-CH 600V 19A TO252AA

MOSFET N-CH 600V 19A TO252AA

Supplier's Site
Mosfet, N-Ch, 19A, 600V, To-252; Transistor Polarity Vishay - 41AH4756 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 19A, 600V, To-252; Transistor Polarity Vishay
41AH4756
Mosfet, N-Ch, 19A, 600V, To-252; Transistor Polarity Vishay 41AH4756
MOSFET, N-CH, 19A, 600V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation RoHS Compliant: Yes

MOSFET, N-CH, 19A, 600V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 650V Vds; 30V Vgs DPAK (TO-252)

MOSFET 650V Vds; 30V Vgs DPAK (TO-252)

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Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 894973-SIHD180N60E-GE3 SIHD180N60E-GE3-ND 278-SIHD180N60E-GE3 SIHD180N60E-GE3 41AH4756 SIHD180N60E-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHD180N60E-GE3 Single FETs, MOSFETs 600V 19A DPAK MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 19A, 600V, To-252; Transistor Polarity Vishay MOSFET
Polarity N-Channel N-Channel N-Channel
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F)
Package Type SOT3; D-Pak TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 TO-3
MOSFET Operating Mode Enhancement
V(BR)DSS 600 volts
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