Manufacturer: Vishay
Win Source Part Number: 894973-SIHD180N60E-G
Series: E
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 19A (Tc) 156W (Tc) Surface Mount D-Pak
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Package: Tube
Mounting: Surface Mount
Family Name: SIHD180
Categories: Discrete Semiconductor Products
Case / Package: D-Pak
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
N-Channel 600V 19A (Tc) 156W (Tc) Surface Mount D-Pak
Trans MOSFET N-CH 600V 19A 3-Pin(2+Tab ) DPAK Product overview: SIHD180N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 19A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 19A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHD180N60E-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 600V 19A TO252AA
MOSFET, N-CH, 19A, 600V, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:19A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation RoHS Compliant: Yes
MOSFET 650V Vds; 30V Vgs DPAK (TO-252)
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 894973-SIHD180N60E-GE3 | SIHD180N60E-GE3-ND | 278-SIHD180N60E-GE3 | SIHD180N60E-GE3 | 41AH4756 | SIHD180N60E-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHD180N60E-GE3 | Single FETs, MOSFETs | 600V 19A DPAK MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 19A, 600V, To-252; Transistor Polarity Vishay | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | ||||
| Package Type | SOT3; D-Pak | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | TO-252 (DPAK); TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-3 | |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 600 volts |
