Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3/2 Product overview: SIHD12N50E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 10.5A, 500V, 0.38ohm, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 10.5A, 500V, 0.38ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHD12N50E-GE3 can be used for catalog matching and distributor lookup.
N-Channel 550V 10.5A (Tc) 114W (Tc) Surface Mount D-Pak
MOSFET 500V Vds 30V Vgs DPAK (TO-252)
MOSFET, N-CH, 500V, 10.5A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:10.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
MOSFET N-CH 550V 10.5A DPAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SIHD12N50E-GE3 | SIHD12N50E-GE3-ND | SIHD12N50E-GE3 | 43Y2396 | SIHD12N50E-GE3 |
| Product Name | N-Channel 10.5A 500V 0.38ohm MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 500V, 10.5A, To-252-3; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |
