Manufacturer: Vishay
Win Source Part Number: 894972-SIHB33N60EF-G
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 33A (Tc) 278W (Tc) Surface Mount D²PAK (TO-263)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Bulk
Mounting: Surface Mount
Family Name: SIHB33
Categories: Discrete Semiconductor Products
Case / Package: D2PAK (TO-263)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Trans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK Product overview: SIHB33N60EF-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 33A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 33A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHB33N60EF-GE3 can be used for catalog matching and distributor lookup.
N-Channel 600V 33A (Tc) 278W (Tc) Surface Mount D²PAK (TO-263)
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
MOSFET N-CH 600V 33A D2PAK
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 894972-SIHB33N60EF-GE3 | 278-SIHB33N60EF-GE3 | SIHB33N60EF-GE3-ND | SIHB33N60EF-GE3 | SIHB33N60EF-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHB33N60EF-GE3 | 600V 33A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | |||
| Package Type | TO-263; SOT3; D2PAK (TO-263) | Bulk | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| MOSFET Operating Mode | Enhancement |