Vishay Intertechnology, Inc. MOSFET SIHB33N60E-E3

The SiHB33N60EF is an N-channel MOSFET featuring a 600 V drain-source voltage rating and a 33 A continuous drain current at 25 °C, housed in a D2PAK (TO-263) package measuring 9.65 mm by 10.67 mm. It has a maximum on-state resistance of 0.098 Ω at 10 V gate-source voltage, a low total gate charge of 155 nC, and an avalanche energy rating of 691 mJ. The device includes a fast body diode with a reverse recovery time of up to 324 ns and meets RoHS standards. It is suited for SMPS, inverters, and high-intensity discharge lighting applications. The series operates from -55 °C to +150 °C junction temperature with a thermal resistance from junction to case of 0.45 °C/W.