Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB24N80AE-T5-GE3

The SiHB24N80AE is an N-channel MOSFET in a D2PAK (TO-263) package rated for 800 V drain-source voltage and 21 A continuous drain current at 25 °C. It features a typical on-state resistance of 0.160 Ω at 10 V gate-source voltage and is rated for 127 mJ single pulse avalanche energy. The device is designed for applications including server and telecom power supplies, switch mode power supplies, power factor correction, and industrial motor drives. It has a maximum power dissipation of 208 W and operates from -55 °C to +150 °C junction temperature. The gate-source threshold voltage ranges from 2 V to 4 V, and the total gate charge is up to 89 nC.