Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB24N65EFT5-GE3

The SiHB24N65EF is an N-channel MOSFET in a D2PAK (TO-263) package designed for high-efficiency switching applications such as SMPS, solar inverters, and telecommunications power supplies. It has a drain-source voltage rating of 650 V, a maximum on-state resistance of 0.156 Ω at 10 V gate drive, and a total gate charge of 122 nC. The device features a fast body diode with a reverse recovery time of up to 288 ns and is rated for single-pulse avalanche energy of 691 mJ. It supports a continuous drain current of 24 A at 25 °C and 15 A at 150 °C, with a maximum power dissipation of 250 W. The operating junction and storage temperature range is -55 to +150 °C, and the package has a junction-to-case thermal resistance of 0.5 °C/W.