The Win Source part number 976450-SIHB24N65EFT1-GE3 is a single N-channel MOSFET packaged in a D2PAK (TO-263) configuration. It features a maximum drain-source voltage (V_DS) of 650 V and a continuous drain current rating of 24 A at a case temperature of 25 ¬8C. The on-state resistance (R_DS(on)) is specified at a maximum of 156 mOc when the gate-source voltage (V_GS) is 10 V and the drain current is 12 A. This MOSFET has a total gate charge (Q_g) of 122 nC, which contributes to its low switching losses. The device is rated for a maximum power dissipation of 250 W and operates within a temperature range of -55 ¬8C to +150 ¬8C. It is suitable for various applications including telecommunications, lighting, and renewable energy systems. The product is lead-free and halogen-free, aligning with modern environmental standards. Engineers considering this MOSFET for their projects should note its fast body diode characteristics, low input capacitance, and suitability for high-efficiency power supply designs.
Win Source Part Number: 976450-SIHB24N65EFT1
Category: Discrete Semiconductor Products>Transistors
Series: E
Package: Tape & Reel
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 250W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIHB24N65EFT1-GE
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 650V 24A (Tc) 250W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 650V 24A (Tc) 250W (Tc) Surface Mount TO-263 (D²Pak)
N-Channel 650V 24A (Tc) 250W (Tc) Surface Mount TO-263 (D²Pak)
Power Field-Effect Transistor, Product overview: SIHB24N65EFT1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHB24N65EFT1-GE
N-CHANNEL 650V
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 976450-SIHB24N65EFT1-GE3 | 742-SIHB24N65EFT1-GE3CT-ND | 278-SIHB24N65EFT1-GE3 | SIHB24N65EFT1-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
