The SIHB22N60ET1-GE3 is an N-Channel MOSFET designed for high-voltage applications, featuring a maximum drain-source voltage (V_DS) of 600 V and a continuous drain current (I_D) rating of 21 A at a case temperature of 25 ¬8C. It has a low on-state resistance (R_DS(on)) of 0.18 Oc at a gate-source voltage (V_GS) of 10 V, which contributes to reduced conduction losses. The device also exhibits a total gate charge (Q_g) of 86 nC, indicating low input capacitance and efficient switching performance. This MOSFET is housed in a D2PAK (TO-263) package, making it suitable for surface mount applications. It operates within a temperature range of -55 ¬8C to +150 ¬8C and has a maximum power dissipation of 227 W. The device is avalanche rated, providing additional reliability in demanding applications. Typical applications include server and telecom power supplies, switch mode power supplies (SMPS), and various industrial applications such as motor drives and renewable energy systems. Engineers considering this MOSFET for their projects should note its favorable thermal resistance ratings and robust electrical characteristics, which make it a viable option for high-performance power management solutions.
MOSFET N-CH 600V 21A TO263 Product overview: SIHB22N60ET1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 21A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 21A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHB22N60ET1-GE3
MOSFET N-CH 600V 21A TO263
N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount D²PAK (TO-263)
N-Channel 600V 21A (Tc) 227W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: Vishay
Win Source Part Number: 894970-SIHB22N60ET1-
Series: E
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 21A (Tc) 227W (Tc) Surface Mount D²PAK (TO-263)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIHB22
Categories: Discrete Semiconductor Products
Case / Package: D2PAK (TO-263)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 95 pct.
Supply and Demand Status: Balance
Quantity per package: 800
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIHB22N60ET1-GE3DKR,
MOSFET N-CH 600V 21A TO263
MOSFET 600V Vds E Series D2PAK TO-263
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIHB22N60ET1-GE3 | SIHB22N60ET1-GE3 | SIHB22N60ET1-GE3TR-ND | 894970-SIHB22N60ET1-GE3 | SIHB22N60ET1-GE3 | SIHB22N60ET1-GE3 |
| Product Name | 600V 21A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHB22N60ET1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 600 volts | |||||
| IDSS | 21000 milliamps |
