Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB22N60AEL-GE3

N-Channel 600V 21A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)

Win Source Part Number: 1277702-SIHB22N60AEL-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: EL
Package: Tube
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1757 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 51 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHB22N60AEL-GE3CT,SIHB22N60AEL-GE3DKR,SIHB22N60AEL-GE3CT,SIHB22N60AEL-GE3DKR,SIHB22N60AEL-GE3DKRINACTIVE,SIHB22N60AEL-GE3TRINACTIVE,SIHB22N60AEL-GE3TR,SIHB22N60AEL-GE3TR
Base Product Number: SIHB22
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V