Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB22N60AE-GE3

MOSFET N-CH 600V 20A D2PAK

N-Channel 600V 20A (Tc) 179W (Tc) Surface Mount TO-263 (D²Pak)

Power Field-Effect Transistor, Product overview: SIHB22N60AE-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHB22N60AE-GE3 can be used for catalog matching and distributor lookup.

Win Source Part Number: 1157717-SIHB22N60AE-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: E
Package: Tube
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 179W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SIHB22N60AEGE3;
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHB22
Drive Voltage (Max Rds On, Min Rds On): 10V