Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB21N65EF-T1-GE3

The SiHB21N65EF is an N-channel MOSFET with a 650 V drain-source voltage rating, designed for switch-mode power supplies, telecommunications, and renewable energy applications. It features a D2PAK (TO-263) package with dimensions of 9.65 mm wide by 10.67 mm long, and includes a thermal pad for enhanced heat dissipation. The device has a maximum on-state resistance of 0.18 Ω at 25 °C and 10 V gate-source voltage, a total gate charge of up to 106 nC, and a fast body diode with a reverse recovery time of 160 ns. It is rated for continuous drain current of 13 A at 100 °C case temperature and supports single pulse avalanche energy up to 367 mJ. The part complies with RoHS and is lead-free and halogen-free. Thermal resistance from junction to case is 0.5 °C/W, and operating junction temperature ranges from -55 °C to +150 °C.