Win Source Part Number: 1277862-SIHB21N65EF-
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 208W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2322 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 75 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHB21
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 650V 21A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263)
MOSFET 650V Vds 30V Vgs D2PAK (TO-263)
MOSFET N-CH 650V 21A D2PAK
MOSFET, N-CH, 650V, 21A, TO-263 ROHS COMPLIANT: YES
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1277862-SIHB21N65EF-GE3 | SIHB21N65EF-GE3-ND | SIHB21N65EF-GE3 | SIHB21N65EF-GE3 | 26AK5789 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 650V, 21A, To-263 Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel |
