N-channel MOSFET for switch mode and power factor correction power supplies, housed in a D2PAK (TO-263) package, with an 800 V drain-source breakdown voltage, a maximum continuous drain current of 13 A at 25 °C, and a typical on-state resistance of 0.304 Ω at 10 V gate-source voltage. It features an avalanche energy rating of 28 mJ and a maximum power dissipation of 156 W. The device has a peak junction temperature of 150 °C and operates from -55 °C to 150 °C.
MOSFET, N-CH, 800V, 13A, TO-263 ROHS COMPLIANT: YES
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 93AH0380 |
| Product Name | Mosfet, N-Ch, 800V, 13A, To-263 Rohs Compliant Vishay |
| Package Type | TO-3; TO-263 |
