Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB15N80AE-T5-GE3

The SiHB15N80AE is an N-channel MOSFET designed for high-efficiency power conversion in applications such as server and telecom power supplies, switch mode power supplies, and solar inverters. It is packaged in a D2PAK (TO-263) case and rated for a drain-source voltage of 800 V. The device has a typical on-state resistance of 0.304 Ω at 25 °C and 10 V gate-source drive, with a maximum continuous drain current of 13 A at 25 °C and 8 A at 150 °C. It features a single pulse avalanche energy rating of 28 mJ and a maximum power dissipation of 156 W. The junction operating temperature range is -55 °C to +150 °C. The part is lead-free and halogen-free, complying with Vishay's material categorization guidelines.