Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB15N80AE-T1-GE3

The SiHB15N80AE is an N-channel MOSFET in a D2PAK (TO-263) package, designed for high-voltage switching applications such as server and telecom power supplies, SMPS, PFC, and industrial drives. It has a drain-source voltage rating of 800 V, a typical on-state resistance of 0.304 Ω at 10 V gate-source voltage, and a maximum continuous drain current of 13 A at 25 °C. The device features an avalanche energy rating of 28 mJ and a maximum power dissipation of 156 W. Its operating junction and storage temperature range is -55 °C to +150 °C. The package dimensions conform to JEDEC TO-263AB standards with a case size of 10.67 mm by 9.65 mm. It meets RoHS requirements and is lead-free and halogen-free.