Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHB12N65E-GE3

Description
Win Source Part Number: 1277861-SIHB12N65E-G E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 156W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1224 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHB12N65E-GE3TR,SIH B12N65E-GE3TRINACTIV E,SIHB12N65E-GE3DKR, SIHB12N65E-GE3DKR,SI HB12N65E-GE3DKRINACT IVE,SIHB12N65E-GE3CT ,SIHB12N65E-GE3TR,SI HB12N65E-GE3CT Base Product Number: SIHB12 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277861-SIHB12N65E-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIHB12N65E-GE3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHB12N65E-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet Transistor, N Channel, 12 A, 650 V, 0.33 Ohm, 10 V Rohs Compliant Vishay - 40X8669 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Win Source Part Number: 1277861-SIHB12N65E-G E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 156W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1224 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHB12N65E-GE3TR,SIH B12N65E-GE3TRINACTIV E,SIHB12N65E-GE3DKR, SIHB12N65E-GE3DKR,SI HB12N65E-GE3DKRINACT IVE,SIHB12N65E-GE3CT ,SIHB12N65E-GE3TR,SI HB12N65E-GE3CT Base Product Number: SIHB12 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277861-SIHB12N65E-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277861-SIHB12N65E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277861-SIHB12N65E-GE3
Win Source Part Number: 1277861-SIHB12N65E-G E3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 50 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 156W (Tc) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK (TO-263) Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1224 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 62 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIHB12N65E-GE3TR,SIH B12N65E-GE3TRINACTIV E,SIHB12N65E-GE3DKR, SIHB12N65E-GE3DKR,SI HB12N65E-GE3DKRINACT IVE,SIHB12N65E-GE3CT ,SIHB12N65E-GE3TR,SI HB12N65E-GE3CT Base Product Number: SIHB12 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277861-SIHB12N65E-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 50
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1224 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIHB12N65E-GE3TR,SIHB12N65E-GE3TRINACTIVE,SIHB12N65E-GE3DKR,SIHB12N65E-GE3DKR,SIHB12N65E-GE3DKRINACTIVE,SIHB12N65E-GE3CT,SIHB12N65E-GE3TR,SIHB12N65E-GE3CT
Base Product Number: SIHB12
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
N-Channel 12A 650V 0.38ohm MOSFET Transistor
278-SIHB12N65E-GE3
N-Channel 12A 650V 0.38ohm MOSFET Transistor 278-SIHB12N65E-GE3
Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2 Product overview: SIHB12N65E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12A, 650V, 0.38ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12A, 650V, 0.38ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHB12N65E-GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3/2 Product overview: SIHB12N65E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12A, 650V, 0.38ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12A, 650V, 0.38ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHB12N65E-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SIHB12N65E-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHB12N65E-GE3-ND
Single FETs, MOSFETs SIHB12N65E-GE3-ND
N-Channel 650V 12A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 650V 12A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHB12N65E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHB12N65E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHB12N65E-GE3
MOSFET N-CH 650V 12A D2PAK

MOSFET N-CH 650V 12A D2PAK

Supplier's Site
Mosfet Transistor, N Channel, 12 A, 650 V, 0.33 Ohm, 10 V Rohs Compliant Vishay - 40X8669 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 12 A, 650 V, 0.33 Ohm, 10 V Rohs Compliant Vishay
40X8669
Mosfet Transistor, N Channel, 12 A, 650 V, 0.33 Ohm, 10 V Rohs Compliant Vishay 40X8669
MOSFET Transistor, N Channel, 12 A, 650 V, 0.33 ohm, 10 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 12 A, 650 V, 0.33 ohm, 10 V RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHB12N65E-GE3
MOSFET SIHB12N65E-GE3
MOSFET 650V Vds 30V Vgs D2PAK (TO-263)

MOSFET 650V Vds 30V Vgs D2PAK (TO-263)

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277861-SIHB12N65E-GE3 278-SIHB12N65E-GE3 SIHB12N65E-GE3-ND SIHB12N65E-GE3 40X8669 SIHB12N65E-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single N-Channel 12A 650V 0.38ohm MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet Transistor, N Channel, 12 A, 650 V, 0.33 Ohm, 10 V Rohs Compliant Vishay MOSFET
Polarity N-Channel N-Channel N-Channel N-Channel
Unlock Full Specs
to access all available technical data