Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs SIHB12N60ET1-GE3

Description
Win Source Part Number: 1341452-SIHB12N60ET1 -GE3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: E Package: Bulk Standard Package: 800 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Power Dissipation (Max): 147W (Tc) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB Supplier Device Package: D2PAK (TO-263) Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHB12 Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
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Description
Win Source Part Number: 1341452-SIHB12N60ET1 -GE3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: E Package: Bulk Standard Package: 800 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Power Dissipation (Max): 147W (Tc) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB Supplier Device Package: D2PAK (TO-263) Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHB12 Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1341452-SIHB12N60ET1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1341452-SIHB12N60ET1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1341452-SIHB12N60ET1-GE3
Win Source Part Number: 1341452-SIHB12N60ET1 -GE3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: E Package: Bulk Standard Package: 800 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Power Dissipation (Max): 147W (Tc) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB Supplier Device Package: D2PAK (TO-263) Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHB12 Drive Voltage (Max Rds On, Min Rds On): 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V

Win Source Part Number: 1341452-SIHB12N60ET1-GE3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: E
Package: Bulk
Standard Package: 800
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Power Dissipation (Max): 147W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) , TO-263AB
Supplier Device Package: D2PAK (TO-263)
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 48 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHB12
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V

Buy Now Datasheet
Single FETs, MOSFETs - SIHB12N60ET1-GE3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHB12N60ET1-GE3-ND
Single FETs, MOSFETs SIHB12N60ET1-GE3-ND
N-Channel 600V 12A (Tc) 147W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 600V 12A (Tc) 147W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Singapore
N-Channel 600V MOSFET Transistor
278-SIHB12N60ET1-GE3
N-Channel 600V MOSFET Transistor 278-SIHB12N60ET1-GE3
MOSFET N-Channel 600V Product overview: SIHB12N60ET1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHB12N60ET1-GE3 can be used for catalog matching and distributor lookup.

MOSFET N-Channel 600V Product overview: SIHB12N60ET1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHB12N60ET1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SIHB12N60ET1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIHB12N60ET1-GE3
Single FETs, MOSFETs SIHB12N60ET1-GE3
MOSFET N-CH 600V 12A TO263

MOSFET N-CH 600V 12A TO263

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHB12N60ET1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHB12N60ET1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHB12N60ET1-GE3
MOSFET N-CH 600V 12A TO263

MOSFET N-CH 600V 12A TO263

Supplier's Site
MOSFET N-Channel 600V

MOSFET N-Channel 600V

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1341452-SIHB12N60ET1-GE3 SIHB12N60ET1-GE3-ND 278-SIHB12N60ET1-GE3 SIHB12N60ET1-GE3 SIHB12N60ET1-GE3 SIHB12N60ET1-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs N-Channel 600V MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel N-Channel; N-Channel
PD 147000 milliwatts 147000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-263; SOT3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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