MOSFET N CH 600V 12A TO263 Product overview: SIHB12N60E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 12A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 12A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHB12N60E-GE3 can be used for catalog matching and distributor lookup.
N-Channel 600V 12A (Tc) 147W (Tc) Surface Mount D²PAK (TO-263)
Manufacturer: Vishay
Win Source Part Number: 756572-SIHB12N60E-GE
Packaging: Bulk
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Family Name: SiHB12N60E
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.vishay.com
Manufacturer Package: D2PAK
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 58nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 937pF @ 100V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 147W (Tc)
Rds On (Maximum) @ Id, Vgs: 380 mOhm @ 6A, 10V
Alternative Parts (Cross-Reference): R6010MNJTL; IPB60R380C6; SPB11N60S5ATMA1;
Introduction Date: December 07, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2026
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited
MOSFET, N CH, 600V, 12A, TO-263-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET, N CHANNEL, 600V, 12A, TO-263-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
MOSFET N-CH 600V 12A D2PAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SIHB12N60E-GE3 | SIHB12N60E-GE3-ND | 756572-SIHB12N60E-GE3 | 68W7032 | 68W7031 | SIHB12N60E-GE3 | SIHB12N60E-GE3 |
| Product Name | 600V 12A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHB12N60E-GE3 | Mosfet, N Ch, 600V, 12A, To-263-3, Full Reel; Channel Type Vishay | Mosfet, N Channel, 600V, 12A, To-263-3; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | |||||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3 | TO-3; TO-263 | TO-3; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | ||
| PD | 147000 milliwatts |
