Vishay Precision Group Single FETs, MOSFETs SIHB12N50E-GE3

Description
N-Channel 500V 10.5A (Tc) 114W (Tc) Surface Mount D²PAK (TO-263)
  • Single FETs, MOSFETs - SIHB12N50E-GE3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHB12N50E-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N Channel, 500V, 10.5A, To-263-3; Channel Type Vishay - 38Y8542 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Mosfet Transistor, N Channel, 10.5 A, 500 V, 0.33 Ohm, 10 V, 4 V Rohs Compliant Vishay - 43Y2393 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
N-Channel 500V 10.5A (Tc) 114W (Tc) Surface Mount D²PAK (TO-263)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIHB12N50E-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHB12N50E-GE3-ND
Single FETs, MOSFETs SIHB12N50E-GE3-ND
N-Channel 500V 10.5A (Tc) 114W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 500V 10.5A (Tc) 114W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHB12N50E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHB12N50E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHB12N50E-GE3
MOSFET N-CH 500V 10.5A D2PAK

MOSFET N-CH 500V 10.5A D2PAK

Supplier's Site
Mosfet, N Channel, 500V, 10.5A, To-263-3; Channel Type Vishay - 38Y8542 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 500V, 10.5A, To-263-3; Channel Type Vishay
38Y8542
Mosfet, N Channel, 500V, 10.5A, To-263-3; Channel Type Vishay 38Y8542
MOSFET, N CHANNEL, 500V, 10.5A, TO-263-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:10.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

MOSFET, N CHANNEL, 500V, 10.5A, TO-263-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:10.5A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet Transistor, N Channel, 10.5 A, 500 V, 0.33 Ohm, 10 V, 4 V Rohs Compliant Vishay - 43Y2393 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 10.5 A, 500 V, 0.33 Ohm, 10 V, 4 V Rohs Compliant Vishay
43Y2393
Mosfet Transistor, N Channel, 10.5 A, 500 V, 0.33 Ohm, 10 V, 4 V Rohs Compliant Vishay 43Y2393
MOSFET Transistor, N Channel, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SIHB12N50E-GE3-ND SIHB12N50E-GE3 38Y8542 43Y2393
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 500V, 10.5A, To-263-3; Channel Type Vishay Mosfet Transistor, N Channel, 10.5 A, 500 V, 0.33 Ohm, 10 V, 4 V Rohs Compliant Vishay
Polarity N-Channel N-Channel N-Channel
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