Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB125N65E-GE3

The SiHB125N65E is an N-channel MOSFET designed for high-efficiency power conversion in server, telecom, and industrial applications, featuring a D2PAK (TO-263) package with dimensions of 9.65 mm by 10.67 mm. It has a drain-source voltage rating of 650 V, a typical on-state resistance of 0.106 Ω at 10 V gate-source voltage, and a maximum continuous drain current of 17 A at 100 °C case temperature. The device includes a Kelvin source connection to reduce gate noise, is rated for 81 mJ unclamped inductive switching energy, and operates over a junction temperature range of -55 °C to +150 °C. It meets the RoHS standard and is lead-free and halogen-free.