Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB11N80AE-T5-GE3

The SiHB11N80AE is an N-channel MOSFET in a D2PAK (TO-263) package, designed for high-voltage switching applications such as server power supplies, PFC circuits, and industrial motor drives. It has a drain-source voltage rating of 800 V, a maximum on-state resistance of 0.450 Ω at 25 °C, and a maximum gate charge of 42 nC. The device features integrated ESD protection with a Zener diode, is rated for 88 mJ unclamped inductive switching energy, and operates over a junction temperature range of -55 °C to +150 °C. The package dimensions conform to JEDEC TO-263AB standards, with a case size of 9.65 mm by 10.67 mm. It meets RoHS standards and is halogen-free.