Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB068N60EF-T5GE3

The SiHB068N60EF is an N-channel MOSFET in a D2PAK (TO-263) package designed for switch mode power supplies, server and telecom power systems, and industrial applications. It has a 600 V drain-source voltage rating, a maximum on-state resistance of 0.068 Ω at 25 °C and 10 V gate-source voltage, and a total gate charge of 77 nC. The device supports a continuous drain current of 41 A at 25 °C and 26 A at 150 °C, with a single pulse avalanche energy rating of 226 mJ. The junction and storage temperature range is -55 °C to +150 °C. The body diode has a maximum reverse recovery time of 240 ns and a forward voltage drop of up to 1.2 V at 16 A. The part is lead-free and halogen-free.