Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB068N60EF-T1GE3

The SiHB068N60EF is an N-channel MOSFET in a D2PAK (TO-263) package, designed for high-efficiency switching applications such as server and telecom power supplies, PFC circuits, and industrial motor drives. It features a drain-source voltage rating of 600 V, a typical on-state resistance of 0.059 Ω at 25 °C, and a maximum continuous drain current of 41 A at 25 °C case temperature. The device includes a fast body diode with a reverse recovery time of up to 240 ns and is rated for 226 mJ of single-pulse avalanche energy. It meets RoHS standards and is lead-free and halogen-free. The D2PAK package measures up to 15.88 mm in height, 10.67 mm in width, and 9.65 mm in base length, with a thermal resistance from junction to case of 0.5 °C/W and junction-to-ambient of 62 °C/W. Operating junction and storage temperatures range from -55 °C to +150 °C.