Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHB065N65E-GE3

The SiHB065N65E-GE3 is an N-channel MOSFET in a D2PAK (TO-263) package, designed for high-efficiency power conversion in server, telecom, and industrial applications. It features a drain-source voltage rating of 650 V, a maximum continuous drain current of 40 A at 25 °C case temperature, and a typical on-state resistance of 0.056 Ω at 10 V gate-source voltage. The device has a single pulse avalanche energy rating of 249 mJ and a maximum power dissipation of 250 W. Thermal resistance from junction to case is 0.5 °C/W and junction-to-ambient is 62 °C/W. The operating temperature range is -55 °C to +150 °C. The part is lead-free, halogen-free, and meets RoHS compliance.