Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHA6N80E-GE3

Description
Win Source Part Number: 1277719-SIHA6N80E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 31W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHA6 Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277719-SIHA6N80E-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIHA6N80E-GE3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHA6N80E-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • Mosfet, N-Ch, 800V, 5.4A, 150Deg C, 31W; Transistor Polarity Vishay - 78AC6516 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Win Source Part Number: 1277719-SIHA6N80E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 31W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHA6 Drive Voltage (Max Rds On, Min Rds On): 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277719-SIHA6N80E-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277719-SIHA6N80E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277719-SIHA6N80E-GE3
Win Source Part Number: 1277719-SIHA6N80E-GE 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 31W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHA6 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277719-SIHA6N80E-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: E
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 31W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHA6
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIHA6N80E-GE3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHA6N80E-GE3-ND
Single FETs, MOSFETs SIHA6N80E-GE3-ND
N-Channel 800V 5.4A (Tc) 31W (Tc) Through Hole TO-220 Full Pack

N-Channel 800V 5.4A (Tc) 31W (Tc) Through Hole TO-220 Full Pack

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
800V 5.4A MOSFET Transistor
278-SIHA6N80E-GE3
800V 5.4A MOSFET Transistor 278-SIHA6N80E-GE3
Trans MOSFET N-CH 800V 5.4A 3-Pin(3+Tab) TO-220FP Product overview: SIHA6N80E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 5.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 5.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHA6N80E-GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 800V 5.4A 3-Pin(3+Tab) TO-220FP Product overview: SIHA6N80E-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 5.4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 5.4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHA6N80E-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHA6N80E-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHA6N80E-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHA6N80E-GE3
MOSFET N-CH 800V 5.4A TO220

MOSFET N-CH 800V 5.4A TO220

Supplier's Site
Mosfet, N-Ch, 800V, 5.4A, 150Deg C, 31W; Transistor Polarity Vishay - 78AC6516 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 800V, 5.4A, 150Deg C, 31W; Transistor Polarity Vishay
78AC6516
Mosfet, N-Ch, 800V, 5.4A, 150Deg C, 31W; Transistor Polarity Vishay 78AC6516
MOSFET, N-CH, 800V, 5.4A, 150DEG C, 31W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.82ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 800V, 5.4A, 150DEG C, 31W; Transistor Polarity:N Channel; Continuous Drain Current Id:5.4A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.82ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHA6N80E-GE3
MOSFET SIHA6N80E-GE3
MOSFET 800V Vds 30V Vgs TO-220 FULLPAK

MOSFET 800V Vds 30V Vgs TO-220 FULLPAK

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277719-SIHA6N80E-GE3 SIHA6N80E-GE3-ND 278-SIHA6N80E-GE3 SIHA6N80E-GE3 78AC6516 SIHA6N80E-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs 800V 5.4A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 800V, 5.4A, 150Deg C, 31W; Transistor Polarity Vishay MOSFET
Polarity N-Channel N-Channel
Package Type TO-220; SOT3 TO-220; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack TO-3
MOSFET Operating Mode Enhancement
V(BR)DSS 800 volts
PD 31000 milliwatts
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