Win Source Part Number: 1277718-SIHA4N80E-GE
Category: Discrete Semiconductor Products>Transistors
Series: E
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 69W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 622 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHA4
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 800V 4.3A (Tc) 69W (Tc) Through Hole TO-220 Full Pack
MOSFET N-CH 800V 4.3A TO220
MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W; Transistor Polarity:N Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.1ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET 800V Vds 30V Vgs TO-220 FULLPAK
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1277718-SIHA4N80E-GE3 | SIHA4N80E-GE3-ND | SIHA4N80E-GE3 | 81AC2769 | SIHA4N80E-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 800V, 4.3A, 150Deg C, 69W; Transistor Polarity Vishay | MOSFET |
| Polarity | N-Channel | N-Channel |
