Vishay Precision Group Single FETs, MOSFETs SIHA22N60E-E3

N-Channel 600V 21A (Tc) 35W (Tc) Through Hole TO-220 Full Pack

Manufacturer: Vishay
Win Source Part Number: 1096406-SIHA22N60E-E3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 86nC @ 10V
Max Input Capacitance: 1920pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 180 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): SPA20N60C3; SiHF22N60E-E3; SiHF22N60E-GE3;
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Product overview: SIHA22N60E-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 21A, 600V, 0.18ohm, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 21A, 600V, 0.18ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHA22N60E-E3 can be used for catalog matching and distributor lookup.