Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHA22N60E-E3 SIHA22N60E-E3

Description
Manufacturer: Vishay Win Source Part Number: 1096406-SIHA22N60E-E 3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Full Pack Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 86nC @ 10V Max Input Capacitance: 1920pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 180 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): SPA20N60C3; SiHF22N60E-E3; SiHF22N60E-GE3; Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHA22N60E-E3 - 1096406-SIHA22N60E-E3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SIHA22N60E-E3-ND - DigiKey
    DigiKey
  • Mosfet, N Channel, 600V, 21A, To-220F; Channel Type Vishay - 61X9227 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHA22N60E-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1096406-SIHA22N60E-E 3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Full Pack Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 86nC @ 10V Max Input Capacitance: 1920pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 180 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): SPA20N60C3; SiHF22N60E-E3; SiHF22N60E-GE3; Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHA22N60E-E3 - 1096406-SIHA22N60E-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHA22N60E-E3
1096406-SIHA22N60E-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHA22N60E-E3 1096406-SIHA22N60E-E3
Manufacturer: Vishay Win Source Part Number: 1096406-SIHA22N60E-E 3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Full Pack Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 21A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 86nC @ 10V Max Input Capacitance: 1920pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 180 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): SPA20N60C3; SiHF22N60E-E3; SiHF22N60E-GE3; Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1096406-SIHA22N60E-E3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 21A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 86nC @ 10V
Max Input Capacitance: 1920pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 180 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): SPA20N60C3; SiHF22N60E-E3; SiHF22N60E-GE3;
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SIHA22N60E-E3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHA22N60E-E3-ND
Single FETs, MOSFETs SIHA22N60E-E3-ND
N-Channel 600V 21A (Tc) 35W (Tc) Through Hole TO-220 Full Pack

N-Channel 600V 21A (Tc) 35W (Tc) Through Hole TO-220 Full Pack

Buy Now Datasheet
Mosfet, N Channel, 600V, 21A, To-220F; Channel Type Vishay - 61X9227 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 600V, 21A, To-220F; Channel Type Vishay
61X9227
Mosfet, N Channel, 600V, 21A, To-220F; Channel Type Vishay 61X9227
MOSFET, N CHANNEL, 600V, 21A, TO-220F; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

MOSFET, N CHANNEL, 600V, 21A, TO-220F; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHA22N60E-E3
MOSFET SIHA22N60E-E3
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK

MOSFET 600V Vds 30V Vgs TO-220 FULLPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHA22N60E-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHA22N60E-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHA22N60E-E3
MOSFET N-CH 600V 21A TO220

MOSFET N-CH 600V 21A TO220

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1096406-SIHA22N60E-E3 SIHA22N60E-E3-ND 61X9227 SIHA22N60E-E3 SIHA22N60E-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHA22N60E-E3 Single FETs, MOSFETs Mosfet, N Channel, 600V, 21A, To-220F; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 600 volts
PD 35000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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