MOSFET N-CH 600V 21A TO220 Product overview: SIHA22N60AEL-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 21A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 21A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIHA22N60AEL-GE3
Manufacturer: Vishay
Win Source Part Number: 894966-SIHA22N60AEL-
Series: EL
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 21A (Tc) 35W (Tc) Through Hole TO-220 Full Pack
Package: Bulk
Package: TO-220-3 Full Pack
Mounting: Through Hole
Part Status: Obsolete
Family Name: SIHA22
Categories: Discrete Semiconductor Products
Case / Package: TO-220 Full Pack
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 87 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: SIHA22N60AEL-GE3DKR-
N-Channel 600V 21A (Tc) 35W (Tc) Through Hole TO-220 Full Pack
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIHA22N60AEL-GE3 | 894966-SIHA22N60AEL-GE3 | SIHA22N60AEL-GE3-ND | SIHA22N60AEL-GE3 |
| Product Name | 600V 21A TO220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHA22N60AEL-GE3 | Single FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | N-Channel | |
| MOSFET Operating Mode | Enhancement | |||
| Transconductance | 0.0160 kS | |||
| PD | 35 milliwatts |