Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHA21N60EF-E3

N-Channel 600V 21A (Tc) 35W (Tc) Through Hole TO-220 Full Pack

Win Source Part Number: 1277872-SIHA21N60EF-E3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 176mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 35W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHA21
Drive Voltage (Max Rds On, Min Rds On): 10V