Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIHA18N60E-E3

Description
Win Source Part Number: 1277740-SIHA18N60E-E 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 34W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHA18 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1277740-SIHA18N60E-E 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 34W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHA18 Drive Voltage (Max Rds On, Min Rds On): 10V
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Datasheet
Datasheet Summary
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The 1277740-SIHA18N60E-E3 is an N-Channel MOSFET from Win Source Electronics, designed for applications requiring high efficiency and reliability. It features a maximum drain-source voltage (V_{DS}) of 600 V and a continuous drain current (I_{D}) rating of 18 A at a case temperature of 25 ¬8C. The on-state resistance (R_{DS(on)) is specified at a maximum of 202 mOc when conducting 9 A with a gate-source voltage (V_{GS}) of 10 V. This MOSFET has a total gate charge (Q_{g}) of 92 nC, which contributes to its low switching losses. The device operates effectively within a temperature range of -55 ¬8C to +150 ¬8C, making it suitable for various environmental conditions. It is packaged in a TO-220 Full Pack configuration, allowing for easy mounting and thermal management. The product is suitable for applications such as server and telecom power supplies, switch mode power supplies (SMPS), and industrial applications including motor drives and renewable energy systems. Its low input capacitance and reduced switching losses make it a viable choice for engineers looking for efficient power management solutions.

Datasheet Summary
Powered by GS/AI

The 1277740-SIHA18N60E-E3 is an N-Channel MOSFET from Win Source Electronics, designed for applications requiring high efficiency and reliability. It features a maximum drain-source voltage (V_{DS}) of 600 V and a continuous drain current (I_{D}) rating of 18 A at a case temperature of 25 ¬8C. The on-state resistance (R_{DS(on)) is specified at a maximum of 202 mOc when conducting 9 A with a gate-source voltage (V_{GS}) of 10 V. This MOSFET has a total gate charge (Q_{g}) of 92 nC, which contributes to its low switching losses. The device operates effectively within a temperature range of -55 ¬8C to +150 ¬8C, making it suitable for various environmental conditions. It is packaged in a TO-220 Full Pack configuration, allowing for easy mounting and thermal management. The product is suitable for applications such as server and telecom power supplies, switch mode power supplies (SMPS), and industrial applications including motor drives and renewable energy systems. Its low input capacitance and reduced switching losses make it a viable choice for engineers looking for efficient power management solutions.

Suppliers

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Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277740-SIHA18N60E-E3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277740-SIHA18N60E-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277740-SIHA18N60E-E3
Win Source Part Number: 1277740-SIHA18N60E-E 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 34W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 56 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHA18 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277740-SIHA18N60E-E3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: E
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 202mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 34W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHA18
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SIHA18N60E-E3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHA18N60E-E3-ND
Single FETs, MOSFETs SIHA18N60E-E3-ND
N-Channel 600V 18A (Tc) 34W (Tc) Through Hole TO-220 Full Pack

N-Channel 600V 18A (Tc) 34W (Tc) Through Hole TO-220 Full Pack

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHA18N60E-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHA18N60E-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHA18N60E-E3
MOSFET N-CHANNEL 600V 18A TO220

MOSFET N-CHANNEL 600V 18A TO220

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Sheung Wan, Hong Kong
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277740-SIHA18N60E-E3 SIHA18N60E-E3-ND SIHA18N60E-E3 SIHA18N60E-E3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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