Win Source Part Number: 972809-SIHA17N80AE-G
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 34W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SIHA17N80AE-GE3
Base Product Number: SIHA17
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 800V 7A (Tc) 34W (Tc) Through Hole TO-220 Full Pack
MOSFET N-CH 800V 7A TO220
MOSFET, N-CH, 800V, 7A, TO-220FP ROHS COMPLIANT: YES
| Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Acme Chip Technology Co., Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 972809-SIHA17N80AE-GE3 | 2104960 | 2104961P | 742-SIHA17N80AE-GE3-ND | SIHA17N80AE-GE3 | 93AH0378 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 800V, 7A, To-220Fp Rohs Compliant Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| PD | 34000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) |
