Manufacturer: Vishay
Win Source Part Number: 1096405-SIHA15N60E-E
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 34W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 Full Pack
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 15A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 76nC @ 10V
Max Input Capacitance: 1350pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 280 mOhm @ 8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
N-Channel 600V 15A (Tc) 34W (Tc) Through Hole TO-220 Full Pack
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
MOSFET N-CH 600V 15A TO220
MOSFET, N CHANNEL, 600V, 15A, TO-220F; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:15A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1096405-SIHA15N60E-E3 | SIHA15N60E-E3-ND | SIHA15N60E-E3 | SIHA15N60E-E3 | 61X9226 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHA15N60E-E3 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 600V, 15A, To-220F; Channel Type Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 600 volts | ||||
| PD | 34000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |
