Vishay Intertechnology, Inc. Single FETs, MOSFETs SIHA14N60E-E3

Description
N-Channel 600V 13A (Tc) 147W (Tc) Through Hole TO-220 Full Pack
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Description
N-Channel 600V 13A (Tc) 147W (Tc) Through Hole TO-220 Full Pack
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - SIHA14N60E-E3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIHA14N60E-E3-ND
Single FETs, MOSFETs SIHA14N60E-E3-ND
N-Channel 600V 13A (Tc) 147W (Tc) Through Hole TO-220 Full Pack

N-Channel 600V 13A (Tc) 147W (Tc) Through Hole TO-220 Full Pack

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277738-SIHA14N60E-E3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277738-SIHA14N60E-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277738-SIHA14N60E-E3
Win Source Part Number: 1277738-SIHA14N60E-E 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: E Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 147W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHA14 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1277738-SIHA14N60E-E3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: E
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 147W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHA14
Drive Voltage (Max Rds On, Min Rds On): 10V

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Sheung Wan, Hong Kong
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK

MOSFET 600V Vds 30V Vgs TO-220 FULLPAK

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHA14N60E-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHA14N60E-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHA14N60E-E3
MOSFET N-CHANNEL 600V 13A TO220

MOSFET N-CHANNEL 600V 13A TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIHA14N60E-E3-ND 1277738-SIHA14N60E-E3 SIHA14N60E-E3 SIHA14N60E-E3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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