Vishay Precision Group Single FETs, MOSFETs SIHA12N50E-E3

Description
N-Channel 500V 10.5A (Tc) 32W (Tc) Through Hole TO-220 Full Pack
  • Single FETs, MOSFETs - 742-SIHA12N50E-E3-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1036403-SIHA12N50E-E3 - Win Source Electronics
    Win Source Electronics
  • Mosfet, N-Ch, 500V, 10.5A, To-220Fp-3; Channel Type Vishay - 38Y8536 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHA12N50E-E3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
N-Channel 500V 10.5A (Tc) 32W (Tc) Through Hole TO-220 Full Pack
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 742-SIHA12N50E-E3-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIHA12N50E-E3-ND
Single FETs, MOSFETs 742-SIHA12N50E-E3-ND
N-Channel 500V 10.5A (Tc) 32W (Tc) Through Hole TO-220 Full Pack

N-Channel 500V 10.5A (Tc) 32W (Tc) Through Hole TO-220 Full Pack

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1036403-SIHA12N50E-E3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1036403-SIHA12N50E-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1036403-SIHA12N50E-E3
Win Source Part Number: 1036403-SIHA12N50E-E 3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 1,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 32W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220 Full Pack Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): SIHP12N50E-GE3; SIHA12N60E-E3; STP16N50M2; STF12N50DM2; STF18NM60N; IPA50R280CEXKSA2SIHA 12N50E-E3.; ECCN: EAR99 Fake Threat In the Open Market: 69 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SIHA12 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1036403-SIHA12N50E-E3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 32W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SIHP12N50E-GE3; SIHA12N60E-E3; STP16N50M2; STF12N50DM2; STF18NM60N; IPA50R280CEXKSA2SIHA12N50E-E3.;
ECCN: EAR99
Fake Threat In the Open Market: 69 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHA12
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Mosfet, N-Ch, 500V, 10.5A, To-220Fp-3; Channel Type Vishay - 38Y8536 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 500V, 10.5A, To-220Fp-3; Channel Type Vishay
38Y8536
Mosfet, N-Ch, 500V, 10.5A, To-220Fp-3; Channel Type Vishay 38Y8536
MOSFET, N-CH, 500V, 10.5A, TO-220FP-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:10.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

MOSFET, N-CH, 500V, 10.5A, TO-220FP-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:10.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIHA12N50E-E3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIHA12N50E-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIHA12N50E-E3
MOSFET N-CH 500V 10.5A TO220

MOSFET N-CH 500V 10.5A TO220

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIHA12N50E-E3
MOSFET SIHA12N50E-E3
MOSFET 500V Vds 30V Vgs TO-220 FULLPAK

MOSFET 500V Vds 30V Vgs TO-220 FULLPAK

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 742-SIHA12N50E-E3-ND 1036403-SIHA12N50E-E3 38Y8536 SIHA12N50E-E3 SIHA12N50E-E3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Mosfet, N-Ch, 500V, 10.5A, To-220Fp-3; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3 TO-3; TO-220 TO-220; TO-220-3 Full Pack
PD 32000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products