Win Source Part Number: 1036403-SIHA12N50E-E
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 32W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220 Full Pack
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): SIHP12N50E-GE3; SIHA12N60E-E3; STP16N50M2; STF12N50DM2; STF18NM60N; IPA50R280CEXKSA2SIHA
ECCN: EAR99
Fake Threat In the Open Market: 69 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIHA12
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 500V 10.5A (Tc) 32W (Tc) Through Hole TO-220 Full Pack
MOSFET N-CH 500V 10.5A TO220
MOSFET 500V Vds 30V Vgs TO-220 FULLPAK
MOSFET, N-CH, 500V, 10.5A, TO-220FP-3; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:10.5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; MSL:- RoHS Compliant: Yes
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1036403-SIHA12N50E-E3 | 742-SIHA12N50E-E3-ND | SIHA12N50E-E3 | SIHA12N50E-E3 | 38Y8536 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 500V, 10.5A, To-220Fp-3; Channel Type Vishay |
| Polarity | N-Channel | N-Channel | |||
| PD | 32000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) |
