Manufacturer: Vishay
Win Source Part Number: 894963-SIHA11N80E-GE
Series: E
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 800 V 12A (Tc) 34W (Tc) Through Hole TO-220 Full Pack
Package: TO-220-3 Full Pack
Package: Tube
Mounting: Through Hole
Family Name: SIHA11
Categories: Discrete Semiconductor Products
Case / Package: TO-220 Full Pack
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
N-Channel 800V 12A (Tc) 34W (Tc) Through Hole TO-220 Full Pack
MOSFET 800V Vds 30V Vgs TO-220 FULLPAK
MOSFET, N-CH, 800V, 12A, 150DEG C, 34W; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:800V; On Resistance Rds(on):0.38ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 800V 12A TO220
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 894963-SIHA11N80E-GE3 | SIHA11N80E-GE3-ND | SIHA11N80E-GE3 | 78AC6507 | SIHA11N80E-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIHA11N80E-GE3 | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 800V, 12A, 150Deg C, 34W; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | |||
| TJ | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | TO-220; SOT3; TO-220 Full Pack | TO-220; TO-220-3 Full Pack | TO-3 | TO-220; TO-220-3 Full Pack |
