Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIE882DF-T1-GE3

Description
Win Source Part Number: 1277593-SIE882DF-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Package / Case: 10-PolarPAK® (L) Supplier Device Package: 10-PolarPAK® (L) Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 12.5 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIE882DF-T1-GE3DKR,S IE882DF-T1-GE3,SIE88 2DF-T1-GE3TR,SIE882D F-T1-GE3CT Base Product Number: SIE882 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277593-SIE882DF-T1-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - 742-SIE882DF-T1-GE3TR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIE882DF-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • N Channel Mosfet, 25V, 60A; Channel Type Vishay - 35R6190 - Newark, An Avnet Company
    Newark, An Avnet Company
  • N Channel Mosfet, 25V, 60A, Full Reel; Channel Type Vishay - 35R0013 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
Win Source Part Number: 1277593-SIE882DF-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Package / Case: 10-PolarPAK® (L) Supplier Device Package: 10-PolarPAK® (L) Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 12.5 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIE882DF-T1-GE3DKR,S IE882DF-T1-GE3,SIE88 2DF-T1-GE3TR,SIE882D F-T1-GE3CT Base Product Number: SIE882 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277593-SIE882DF-T1-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277593-SIE882DF-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277593-SIE882DF-T1-GE3
Win Source Part Number: 1277593-SIE882DF-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Package / Case: 10-PolarPAK® (L) Supplier Device Package: 10-PolarPAK® (L) Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 12.5 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 52 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIE882DF-T1-GE3DKR,S IE882DF-T1-GE3,SIE88 2DF-T1-GE3TR,SIE882D F-T1-GE3CT Base Product Number: SIE882 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277593-SIE882DF-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Package / Case: 10-PolarPAK® (L)
Supplier Device Package: 10-PolarPAK® (L)
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 12.5 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 52 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIE882DF-T1-GE3DKR,SIE882DF-T1-GE3,SIE882DF-T1-GE3TR,SIE882DF-T1-GE3CT
Base Product Number: SIE882
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Single FETs, MOSFETs - 742-SIE882DF-T1-GE3TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIE882DF-T1-GE3TR-ND
Single FETs, MOSFETs 742-SIE882DF-T1-GE3TR-ND
N-Channel 25V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

N-Channel 25V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SIE882DF-T1-GE3
MOSFET SIE882DF-T1-GE3
MOSFET 25V Vds 20V Vgs PolarPAK

MOSFET 25V Vds 20V Vgs PolarPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIE882DF-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIE882DF-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIE882DF-T1-GE3
MOSFET N-CH 25V 60A 10POLARPAK

MOSFET N-CH 25V 60A 10POLARPAK

Supplier's Site
N Channel Mosfet, 25V, 60A; Channel Type Vishay - 35R6190 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 25V, 60A; Channel Type Vishay
35R6190
N Channel Mosfet, 25V, 60A; Channel Type Vishay 35R6190
N CHANNEL MOSFET, 25V, 60A; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Product Range:- RoHS Compliant: Yes

N CHANNEL MOSFET, 25V, 60A; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Product Range:- RoHS Compliant: Yes

Supplier's Site Datasheet
N Channel Mosfet, 25V, 60A, Full Reel; Channel Type Vishay - 35R0013 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 25V, 60A, Full Reel; Channel Type Vishay
35R0013
N Channel Mosfet, 25V, 60A, Full Reel; Channel Type Vishay 35R0013
N CHANNEL MOSFET, 25V, 60A, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes

N CHANNEL MOSFET, 25V, 60A, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277593-SIE882DF-T1-GE3 742-SIE882DF-T1-GE3TR-ND SIE882DF-T1-GE3 SIE882DF-T1-GE3 35R6190
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs N Channel Mosfet, 25V, 60A; Channel Type Vishay
Polarity N-Channel N-Channel N-Channel
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