Vishay Intertechnology, Inc. Single FETs, MOSFETs SIE878DF-T1-GE3

Description
MOSFET N-CH 25V 45A 10POLARPAK
Request a Quote Datasheet
Description
MOSFET N-CH 25V 45A 10POLARPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIE878DF-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIE878DF-T1-GE3
Single FETs, MOSFETs SIE878DF-T1-GE3
MOSFET N-CH 25V 45A 10POLARPAK

MOSFET N-CH 25V 45A 10POLARPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277570-SIE878DF-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277570-SIE878DF-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277570-SIE878DF-T1-GE3
Win Source Part Number: 1277570-SIE878DF-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5.2W (Ta), 25W (Tc) Package / Case: 10-PolarPAK® (L) Supplier Device Package: 10-PolarPAK® (L) Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 12.5 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 83 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIE878DFT1GE3,SIE878 DF-T1-GE3DKR,SIE878D F-T1-GE3TR,SIE878DF- T1-GE3CT Base Product Number: SIE878 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277570-SIE878DF-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 25W (Tc)
Package / Case: 10-PolarPAK® (L)
Supplier Device Package: 10-PolarPAK® (L)
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 12.5 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 83 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIE878DFT1GE3,SIE878DF-T1-GE3DKR,SIE878DF-T1-GE3TR,SIE878DF-T1-GE3CT
Base Product Number: SIE878
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIE878DF-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIE878DF-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIE878DF-T1-GE3
MOSFET N-CH 25V 45A 10POLARPAK

MOSFET N-CH 25V 45A 10POLARPAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number SIE878DF-T1-GE3 1277570-SIE878DF-T1-GE3 SIE878DF-T1-GE3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 25 volts
IDSS 45000 milliamps
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