Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIE876DF-T1-GE3

Win Source Part Number: 1277569-SIE876DF-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4.4V @ 250µA Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Package / Case: 10-PolarPAK® (L) Supplier Device Package: 10-PolarPAK® (L) Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 30 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 81 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIE876DF-T1-GE3,SIE8 76DF-T1-GE3TR,SIE876 DFT1GE3,SIE876DF-T1- GE3DKR,SIE876DF-T1-G E3CT Base Product Number: SIE876 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V