Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE874DF-T1-GE3 SIE874DF-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 064636-SIE874DF-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 10-PolarPAK (L) Dimension: 10-PolarPAK (L) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 145nC @ 10V Max Input Capacitance: 6200pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.17 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 064636-SIE874DF-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 10-PolarPAK (L) Dimension: 10-PolarPAK (L) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 145nC @ 10V Max Input Capacitance: 6200pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.17 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE874DF-T1-GE3 - 064636-SIE874DF-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE874DF-T1-GE3
064636-SIE874DF-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE874DF-T1-GE3 064636-SIE874DF-T1-GE3
Manufacturer: Vishay Win Source Part Number: 064636-SIE874DF-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 10-PolarPAK (L) Dimension: 10-PolarPAK (L) Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 60A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 145nC @ 10V Max Input Capacitance: 6200pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.17 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 064636-SIE874DF-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 10-PolarPAK (L)
Dimension: 10-PolarPAK (L)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 60A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 145nC @ 10V
Max Input Capacitance: 6200pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.17 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SIE874DF-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIE874DF-T1-GE3TR-ND
Single FETs, MOSFETs SIE874DF-T1-GE3TR-ND
MOSFET N-CH 20V 60A 10POLARPAK

MOSFET N-CH 20V 60A 10POLARPAK

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Sheung Wan, Hong Kong
MOSFET 20V 60A N-CH MOSFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIE874DF-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIE874DF-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIE874DF-T1-GE3
MOSFET N-CH 20V 60A 10POLARPAK

MOSFET N-CH 20V 60A 10POLARPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 064636-SIE874DF-T1-GE3 SIE874DF-T1-GE3TR-ND SIE874DF-T1-GE3 SIE874DF-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE874DF-T1-GE3 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 20 volts
PD 5200 to 125000 milliwatts
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