Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE862DF SIE862DF

Description
Manufacturer: Vishay Win Source Part Number: 064634-SIE862DF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 10-PolarPAK (U) Dimension: 10-PolarPAK (U) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 3100pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.2 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Vishay Win Source Part Number: 064634-SIE862DF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 10-PolarPAK (U) Dimension: 10-PolarPAK (U) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 3100pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.2 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE862DF - 064634-SIE862DF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE862DF
064634-SIE862DF
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE862DF 064634-SIE862DF
Manufacturer: Vishay Win Source Part Number: 064634-SIE862DF Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 10-PolarPAK (U) Dimension: 10-PolarPAK (U) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 3100pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3.2 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 064634-SIE862DF
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 10-PolarPAK (U)
Dimension: 10-PolarPAK (U)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 75nC @ 10V
Max Input Capacitance: 3100pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.2 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 064634-SIE862DF
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE862DF
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 5200 to 104000 milliwatts
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