Vishay Intertechnology, Inc. MOSFET SIE850DF-T1-E3

Description
MOSFET 30V 164A 104W 2.5mohm @ 10V
Description
MOSFET 30V 164A 104W 2.5mohm @ 10V
Datasheet
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N-channel 30-V MOSFET in a PolarPAK leadless package designed for double-sided cooling, with a continuous drain current rating of 60 A (package-limited) and a drain-source on-state resistance of 0.0025 Ω at 10 V gate-source voltage. The device is halogen-free per IEC 61249-2-21, RoHS-compliant, and qualified for operation from -55 °C to 150 °C junction temperature. It features ultra-low thermal resistance and is tested for 100 % Rds(on) and UIS.

Datasheet Summary
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N-channel 30-V MOSFET in a PolarPAK leadless package designed for double-sided cooling, with a continuous drain current rating of 60 A (package-limited) and a drain-source on-state resistance of 0.0025 Ω at 10 V gate-source voltage. The device is halogen-free per IEC 61249-2-21, RoHS-compliant, and qualified for operation from -55 °C to 150 °C junction temperature. It features ultra-low thermal resistance and is tested for 100 % Rds(on) and UIS.

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Sheung Wan, Hong Kong
MOSFET 30V 164A 104W 2.5mohm @ 10V

MOSFET 30V 164A 104W 2.5mohm @ 10V

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number SIE850DF-T1-E3
Product Name MOSFET
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