Vishay Intertechnology, Inc. 40V 50A MOSFET Transistor SIE832DF-T1-E3

MOSFET N-CH 40V 50A 10POLARPAK Product overview: SIE832DF-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 50A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIE832DF-T1-E3 can be used for catalog matching and distributor lookup.

N-Channel 40V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S)

Win Source Part Number: 1277565-SIE832DF-T1-E3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Package / Case: 10-PolarPAK® (S)
Supplier Device Package: 10-PolarPAK® (S)
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 20 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIE832DF-T1-E3CT,SIE832DFT1E3,SIE832DF-T1-E3TR,SIE832DF-T1-E3DKR
Base Product Number: SIE832
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V