The SiE830DF is an N-channel 30-V MOSFET designed for high-efficiency switching applications such as VRM, point-of-load, and synchronous rectification. It features a 10-pin PolarPAK package with a top-exposed pad for double-sided cooling and a leadless construction. The device has a maximum continuous drain current of 50 A limited by the package, a drain-source on-state resistance of 0.0042 Ω at VGS = 10 V and 0.0048 Ω at VGS = 4.5 V, and a total gate charge of 33 nC. It is rated for a maximum junction temperature of 150 °C and meets RoHS compliance. The package has a junction-to-case thermal resistance of 1.2 °C/W (drain top) and is tested for 100% Rg and UIS.
Win Source Part Number: 1277487-SIE830DF-T1-
Category: Discrete Semiconductor Products>Transistors
Series: WFET®
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Package / Case: 10-PolarPAK® (S)
Supplier Device Package: 10-PolarPAK® (S)
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 15 V
Vgs (Max): ±12V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SIE830
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
| Win Source Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | 1277487-SIE830DF-T1-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single |
| Polarity | N-Channel |
