Vishay Intertechnology, Inc. 30V 50A MOSFET Transistor SIE830DF-T1-E3

Description
MOSFET N-CH 30V 50A 10-POLARPAK Product overview: SIE830DF-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 50A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SIE830DF-T1-E3 can be used for catalog matching and distributor lookup.
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Description
MOSFET N-CH 30V 50A 10-POLARPAK Product overview: SIE830DF-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 50A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SIE830DF-T1-E3 can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
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Singapore
30V 50A MOSFET Transistor
285-SIE830DF-T1-E3
30V 50A MOSFET Transistor 285-SIE830DF-T1-E3
MOSFET N-CH 30V 50A 10-POLARPAK Product overview: SIE830DF-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 50A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SIE830DF-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 50A 10-POLARPAK Product overview: SIE830DF-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 50A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SIE830DF-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE830DF-T1-E3 - 134718-SIE830DF-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE830DF-T1-E3
134718-SIE830DF-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE830DF-T1-E3 134718-SIE830DF-T1-E3
Manufacturer: Vishay Win Source Part Number: 134718-SIE830DF-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 5.2W (Ta), 104W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: 10-PolarPAK (S) Dimension: 10-PolarPAK (S) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 115nC @ 10V Max Input Capacitance: 5500pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 4.2 mOhm @ 16A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 134718-SIE830DF-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 10-PolarPAK (S)
Dimension: 10-PolarPAK (S)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 115nC @ 10V
Max Input Capacitance: 5500pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 4.2 mOhm @ 16A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 285-SIE830DF-T1-E3 134718-SIE830DF-T1-E3
Product Name 30V 50A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE830DF-T1-E3
Polarity N-Channel N-Channel; N-Channel
PD 104000 milliwatts 5200 to 104000 milliwatts
TJ -55 C (-67 F) -55 to 150 C (-67 to 302 F)
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