Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIE822DF-T1-GE3

Win Source Part Number: 1277592-SIE822DF-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 18.3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Package / Case: 10-PolarPAK® (S)
Supplier Device Package: 10-PolarPAK® (S)
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 10 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIE822DF-T1-GE3CT,SIE822DF-T1-GE3TR,SIE822DF-T1-GE3DKR,SIE822DFT1GE3
Base Product Number: SIE822
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

N-Channel 20V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S)

N-Channel 20V 50A (Tc) 5.2W (Ta), 104W (Tc) Surface Mount 10-PolarPAK® (S)