Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIE820DF-T1-E3 SIE820DF-T1-E3

Manufacturer: Vishay
Win Source Part Number: 101605-SIE820DF-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 5.2W (Ta), 104W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: 10-PolarPAK (S)
Dimension: 10-PolarPAK (S)
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 143nC @ 10V
Max Input Capacitance: 4300pF @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 3.5 mOhm @ 18A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

MOSFET N-CH 20V 50A 10-POLARPAK Product overview: SIE820DF-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 50A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 50A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SIE820DF-T1-E3 can be used for catalog matching and distributor lookup.