Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SIE818DF-T1-GE3

Description
Win Source Part Number: 1277591-SIE818DF-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Package / Case: 10-PolarPAK® (L) Supplier Device Package: 10-PolarPAK® (L) Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 38 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 66 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIE818DFT1GE3,SIE818 DF-T1-GE3DKR,SIE818D F-T1-GE3CT,SIE818DF- T1-GE3TR Base Product Number: SIE818 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 1277591-SIE818DF-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Package / Case: 10-PolarPAK® (L) Supplier Device Package: 10-PolarPAK® (L) Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 38 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 66 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIE818DFT1GE3,SIE818 DF-T1-GE3DKR,SIE818D F-T1-GE3CT,SIE818DF- T1-GE3TR Base Product Number: SIE818 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Datasheet
Datasheet Summary
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The Vishay SiE818DF is an N-channel MOSFET with a maximum drain-source voltage of 75V and a continuous drain current rating of 60A. It features a low on-state resistance of 0.0095Oc at a gate-source voltage of 10V, making it suitable for applications requiring efficient power management. The device is housed in a PolarPAK-10 package, which allows for double-sided cooling due to its ultra-low thermal resistance. It is halogen-free and compliant with RoHS directives, ensuring environmental safety. The MOSFET is designed for various applications, including primary side switching, half-bridge configurations, and synchronous rectification. With a maximum power dissipation of 125W and a wide operating temperature range of -55 to 150¬8C, this component is versatile for demanding environments.

Datasheet Summary
Powered by GS/AI

The Vishay SiE818DF is an N-channel MOSFET with a maximum drain-source voltage of 75V and a continuous drain current rating of 60A. It features a low on-state resistance of 0.0095Oc at a gate-source voltage of 10V, making it suitable for applications requiring efficient power management. The device is housed in a PolarPAK-10 package, which allows for double-sided cooling due to its ultra-low thermal resistance. It is halogen-free and compliant with RoHS directives, ensuring environmental safety. The MOSFET is designed for various applications, including primary side switching, half-bridge configurations, and synchronous rectification. With a maximum power dissipation of 125W and a wide operating temperature range of -55 to 150¬8C, this component is versatile for demanding environments.

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277591-SIE818DF-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277591-SIE818DF-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277591-SIE818DF-T1-GE3
Win Source Part Number: 1277591-SIE818DF-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 75 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 5.2W (Ta), 125W (Tc) Package / Case: 10-PolarPAK® (L) Supplier Device Package: 10-PolarPAK® (L) Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 38 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 66 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SIE818DFT1GE3,SIE818 DF-T1-GE3DKR,SIE818D F-T1-GE3CT,SIE818DF- T1-GE3TR Base Product Number: SIE818 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277591-SIE818DF-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 75 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5.2W (Ta), 125W (Tc)
Package / Case: 10-PolarPAK® (L)
Supplier Device Package: 10-PolarPAK® (L)
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 38 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 66 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SIE818DFT1GE3,SIE818DF-T1-GE3DKR,SIE818DF-T1-GE3CT,SIE818DF-T1-GE3TR
Base Product Number: SIE818
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Singapore
N-Channel MOSFET Transistor
2088-SIE818DF-T1-GE3
N-Channel MOSFET Transistor 2088-SIE818DF-T1-GE3
N-CHANNEL 75-V (D-S) MOSFET - Tape and Reel Product overview: SIE818DF-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIE818DF-T1-GE3 can be used for catalog matching and distributor lookup.

N-CHANNEL 75-V (D-S) MOSFET - Tape and Reel Product overview: SIE818DF-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SIE818DF-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SIE818DF-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIE818DF-T1-GE3TR-ND
Single FETs, MOSFETs SIE818DF-T1-GE3TR-ND
N-Channel 75V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

N-Channel 75V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 75V Vds 20V Vgs PolarPAK

MOSFET 75V Vds 20V Vgs PolarPAK

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIE818DF-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIE818DF-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIE818DF-T1-GE3
MOSFET N-CH 75V 60A 10POLARPAK

MOSFET N-CH 75V 60A 10POLARPAK

Supplier's Site
Mosfet, N Channel, 75V, 60A, Polarpak-10, Full Reel; Channel Type Vishay - 15R4859 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 75V, 60A, Polarpak-10, Full Reel; Channel Type Vishay
15R4859
Mosfet, N Channel, 75V, 60A, Polarpak-10, Full Reel; Channel Type Vishay 15R4859
MOSFET, N CHANNEL, 75V, 60A, POLARPAK-10, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:125W RoHS Compliant: Yes

MOSFET, N CHANNEL, 75V, 60A, POLARPAK-10, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:125W RoHS Compliant: Yes

Supplier's Site
Mosfet, N Channel, 75V, 60A, Polarpak-10; Channel Type Vishay - 17X9998 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 75V, 60A, Polarpak-10; Channel Type Vishay
17X9998
Mosfet, N Channel, 75V, 60A, Polarpak-10; Channel Type Vishay 17X9998
MOSFET, N CHANNEL, 75V, 60A, POLARPAK-10; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

MOSFET, N CHANNEL, 75V, 60A, POLARPAK-10; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.1V RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277591-SIE818DF-T1-GE3 2088-SIE818DF-T1-GE3 SIE818DF-T1-GE3TR-ND SIE818DF-T1-GE3 SIE818DF-T1-GE3 15R4859 17X9998
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single N-Channel MOSFET Transistor Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N Channel, 75V, 60A, Polarpak-10, Full Reel; Channel Type Vishay Mosfet, N Channel, 75V, 60A, Polarpak-10; Channel Type Vishay
Polarity N-Channel N-Channel N-Channel N-Channel N-Channel
Package Type SOT3 10-PolarPAK® (L) 10-PolarPAKR (L) TO-3 TO-3
PD 125000 milliwatts 125000 milliwatts
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